2021-至今，嘉庚创新实验室未来显示技术研究院副院长
2020-至今，想亲亲你的小核桃物理科学与技术学院副院长
2019-2021，谢菲尔德大学，交流访问
2016—至今，想亲亲你的小核桃物理系教授
2014-2015，德克萨斯大学奥斯汀分校，访问学者
2011-2016，想亲亲你的小核桃物理系副教授
2007-2011，想亲亲你的小核桃物理系讲师
2002-2007，南京大学物理系博士研究生/获博士学位
1998-2002，南京大学物理系本科/获学士学位

1. Dipole-like and quadrupole-like reflection modes for Ag nanocube arrays on dielectric substrates. J. Phys. D: Appl. Phys, 55, 375102, 2022
2. Simplified numerical modeling for Fano interference-induced asymmetric light reflectance effect using equivalent medium theory. Opt. Express, 30, 22700-22711, 2022.
3. Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED. Nanoscale Res Lett, 17, 13, 2022.
4. Deducing localized surface plasmon properties through analysis of the far-field optical spectra. J. Phys. D: Appl. Phys., 55, 015108, 2022.
5. Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response, ACS Appl. Electron. Mater., 4, 1, 188–196, 2022.
6. Enhancing deep-UV emission at 234 nm by introducing a truncated pyramid AlN/GaN nanostructure with fine-tuned multiple facets, Nanoscale, 14, 653-662, 2022.
7. Electrode-Dependent Electrical Properties of Detection-Band Tunable Ultraviolet Photodetectors Based on Ga2O3/GaN Heterostructures, physica status solidi (a), 218, 15, 2100166, 2021.
8. Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density, Nanoscale Res Lett, 16, 99, 2021.
9. Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm, Opt. Mater. Express, 11, 1282-1291, 2021.
10. Localized surface plasmon enhanced Ga2O3 solar blind photodetectors, Opt. Express, 28, 5731-5740, 2020.
11. Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded, Nanoscale Res Lett, 14, 170, 2019.
12. Peak splitting and locking behavior arising from Fano interference between localized surface plasmons and cavity modes. Physical Review B, 99, 125420, 2019
13. Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units. Crystal Growth & Design, 19, 1720-1727, 2019
14. Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection. Nanoscale, 6: 14733-14739，2014
15. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons.Scientific Reports, 4: 4380 2014
16. Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells.Scientific Reports, 2: 816 2012

主持和参与国家重点研发计划、自然科学基金等项目近10项，个人经费2500余万元。

微电子与固体电子学、凝聚态物理等

大学物理