代表性文章或专著
(1)G. Lin*, Y. An, H. Ding, H. Zhao, J. Wang, S. Chen, C. Li, R. Hickey, J. Kolodzey, Y. Zeng*, Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications, Nanophononics 12(2), 219 (2023).
(2)K. Qian, S. Wu, J. Qian, K. Yang, Y. An, H. Cai, G. Lin*, J. Wang, W. Huang, S. Chen, C. Li*, Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy, Journal of Physics D: Applied Physics 56, 075101(2023).
(3)S. Li, Q. Wu, H. Ding, S. Wu, X. Cai, R. Wang, J. Xiong, G. Lin*, W. Huang, S. Chen, C. Li*, High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector, Nano Research (2022), https://doi.org/10.1007/s12274-022-5081-0
(4)G. Lin, K. Qian, H. Cai, H. Zhao, J. Xu, S. Chen, C. Li*, R. Hickey, J. Kolodzey, Y. Zeng*, Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing, Journal of Alloys and Compounds 915, 165453 (2022).
(5)H. Cai, K. Qian, Y. An, G. Lin*, S. Wu, H. Ding, W. Huang, S. Chen, J. Wang, C. Li*, Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing, Journal of Alloys and Compounds 904, 164068 (2022).
(6)G. Lin, P. Cui, T. Wang, R. Hickey, J. Zhang, H. Zhao, J. Kolodzey, Y. Zeng, Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching, IEEE Transactions on Nanotechnology 20, 846 (2021).
(7)G. Lin, H. Hong, J. Zhang, P. Cui, Y. Mao, D. Liang, J. Wang, S. Chen, C. Li* and Y. Zeng*, Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate, Journal of Alloys and Compounds 858, 157653 (2021).
(8)G. Lin, M. Zhao, M. Jia, P. Cui, H. Zhao, J. Zhang, A. T. Charlie Johnson, L. Gundlach*, X. Liu, and Y. Zeng*, Improving the electrical performance of top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment, Journal of Physics D: Applied Physics 53, 415106 (2020).
(9)G. Lin, D. Liang, Z. Huang, C. Yu, P. Cui, J. Zhang, J. Wang, J. Xu, S. Chen, C. Li*, and Y. Zeng*, Fabrication of polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on SiO2/Si substrate, Semiconductor Science and Technology 35, 095016 (2020).
(10)G. Lin, M. Zhao, M. Jia, J. Zhang, P. Cui, L. Wei, H. Zhao, A T Charlie Johnson, L. Gundlach and Y. Zeng*, Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer, Journal of Physics D: Applied Physics 53, 105103 (2020).
(11)G. Lin, D. Liang, C. Yu, H. Hong, Y. Mao, C. Li* and S. Chen, Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique, Optics Express 27, 32801 (2019).
(12)G. Lin, D. Liang, C. Yu, H. Hong, Y. Mao, C. Li*, S. Chen and Y. Zeng*, Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method, Semiconductor Science and Technology 34, 125005 (2019).
(13)G. Lin, D. Liang, J. Wang, C. Yu, C. Li*, S. Chen W. Huang, J. Wang, J. Xu, Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature, Materials Science in Semiconductor Processing 97, 56 (2019).
(14)G. Lin, J. Wang, Z. Huang, Y. Mao, C. Li*, W. Huang, S. Chen, H. Lai and S. Huang, Optical gain from vertical Ge-on-Si resonant-cavity light emitting diodes with dual active regions, Applied Physics Letters 111, 111106 (2017).
(15)G. Lin, X. Yi, C. Li*, N. Chen, L. Zhang, S. Chen, W. Huang, J. Wang, X. Xiong, and J. Sun, Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate, Applied Physics Letters 109, 141104 (2016). (Featured by Semiconductor Today news)
(16)G. Lin, C. Wang, C. Li*, C. Chen, Z. Huang, W. Huang, S. Chen, H. Lai, C. Jin, and J. Sun, Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature, Applied Physics Letters 108, 191107 (2016).
(17)G. Lin, N. Chen, L. Zhang, Z. Huang, W. Huang, J. Wang, J. Xu, S. Chen and C. Li*, Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate, Materials 9, 803 (2016).
(18)G. Lin, X. Lan, N. Chen, C. Li*, D. Huang, S. Chen, W. Huang, J. Xu, H. Lai, Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation, Materials Science in Semiconductor Processing 56, 282 (2016).
(19)G. Lin, M. Tang, C. Li*, S. Huang, W. Lu, C. Wang, G. Yan, and S. Chen, Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height, Applied Physics Letters 103, 253506 (2013).
